About Sandia:

Sandia National Laboratories is the nation’s premier science and engineering lab for national security and technology innovation, with teams of specialists focused on cutting-edge work in a broad array of areas. Some of the main reasons we love our jobs:

• Challenging work with amazing impact that contributes to security, peace, and freedom worldwide
• Extraordinary co-workers
• Some of the best tools, equipment, and research facilities in the world
• Career advancement and enrichment opportunities
• Flexible work arrangements for many positions include 9/80 (work 80 hours every two weeks, with every other Friday off) and 4/10 (work 4 ten-hour days each week) compressed workweeks, part-time work, and telecommuting (a mix of onsite work and working from home)
• Generous vacation, strong medical and other benefits, competitive 401k, learning opportunities, relocation assistance and amenities aimed at creating a solid work/life balance*

World-changing technologies. Life-changing careers. Learn more about Sandia at: http://www.sandia.gov

*These benefits vary by job classification.

What Your Job Will Be Like:

The Radiation-Solid Interactions Department at Sandia National Laboratories, which operates the Ion Beam Laboratory (IBL), is seeking an early to mid-career R&D S&E, Physics staff scientist with a strong interest and expertise in the modeling of radiation induced defects in semiconductor materials and devices. The successful candidate will explore development and use of computational simulations, including a Sandia developed 1D Experimental Physics Code (XPD), clustering of electrically active defects in state-of-the-art semiconductor devices and simulation of ion beam implantation and irradiation. Current projects include:

• 1D Experimental Physics Code (XPD): Investigating the effects of radiation induced electrically active defects on semiconductor materials and devices using an atomistic based drift diffusion model that is defect aware.
• Clustering of Defects: Exploring the effects of radiation induced defects on state-of-the-art semiconductor devices including FINFET and GAAFET geometries.
• Ion Beam Implantation and Irradiation: Explore the effects of ion irradiation and implantation using binary collision approximate codes including SRIM and Marlowe.

While this position is primarily modeling, and simulation based a candidate would be expected to interact with multiple experimental staff and develop a solid understanding of ion beam implantation and irradiation capabilities at the IBL to further understand the radiation induced defects and characterization. Additionally, you will collaborate with a multidisciplinary team, engaging with both internal and external at Sandia and Los Alamos National Laboratories.

On any given day, you may be called on to:

• Develop and Utilize Computational simulations of radiation effects in semiconductor devices, including 1D Experimental Physics Codes (XPD) and commercial TCAD software: We routinely use the XPD code to simulate the effects of radiation on a wide variety of materials and devices including Si, GaAs and GaN including diodes, bipolar junction transistors (BJTs), heterojunction bipolar transistors (HBTs), high voltage diodes (HV) and high electron mobility transistors (HEMTs). XPD is an in-house developed defect aware drift-diffusion code that outputs a time dependent carrier flow based on capture and emission of carriers by defects and evolution of defects by diffusion and reactions, i.e. annealing.
• Develop and Utilize Binary Collision Codes (BCC) for Ion Implantation and Irradiation Studies: We use BCC codes SRIM and Marlowe, to explore the effects of ion beam implantation and irradiation. Additionally, we develop novel implementation that allow us to explore the effects of defect clustering on state-of-the-art CMOS devices.
• Collaborate in a Multidisciplinary Team: Contribute to significant advancements in the quantum realm, resulting in multiple high-impact publications, including articles in prestigious journals such as Science and Nature, as well as several R&D 100 awards for innovative solutions in radiation effects testing.
• Generate Research Publications and Present at Leading Technical Conferences: Actively contribute to the dissemination of research findings through publications and presentations at prominent technical conferences.

Due to the nature of the work the selected applicant must be able to work onsite in Albuquerque, New Mexico. Relocation will be provided for those that qualify.

Salary Range:

$114,000 - $227,500

*Salary range is estimated, and actual salary will be determined after consideration of the selected candidate's experience and qualifications, and application of any approved geographic salary differential.

Qualifications We Require:

• A Bachelor's degree in a relevant discipline (Astrophysics, Atmospheric Science and Meteorology, Atomic Physics, Molecular and Optical Physics, Engineering Physics, Applied Physics, Nuclear Physics, Physics and Astronomy).
• Five (5) years of directly relevant experience, or an equivalent combination of directly relevant education and engineering or scientific experience that demonstrates the knowledge, skills, and ability to perform independent research and development.
• Ability to acquire and maintain a DOE Q-level security clearance.

Qualifications We Desire:

The ideal R&D S&E Physics candidate for Sandia National Laboratories will in addition possess the following:

• Graduate degree in Physics or a highly related field where an independent research project was a graduation requirement (e.g., independent project, thesis, or dissertation).
• Experience preparing research for dissemination through presentations at national conferences and peer-reviewed publications in top journals.
• Demonstrated leadership abilities of both projects and teams and the ability to work in loosely defined areas with minimal direction while maintaining vision for the overall mission.
• Strong verbal and written communication skills, ability to work effectively in multidisciplinary teams.

Also, for this posting we are seeking individuals with the following experience:

Educational Qualifications:

• Masters Degree with a minimum of ten (10) years of relevant experience in a national laboratory, academic, or industrial setting.
• Ph.D. in Physics, Chemistry, Materials Science, Electrical Engineering, or a related field, accompanied by at least two (2) years of relevant experience in a national laboratory, academic, or industrial environment.

Technical Expertise:

• Solid understanding of semiconductor material and devices physics
• Understanding of radiation induced defects in semiconductor materials
• Understanding of semiconductor material and devices characterization techniques, capacitance-voltage measurements, DLTS, photoluminescence, and ion beam analysis techniques including Rutherford backscattering spectrometry (RBS), nuclear reaction analysis (NRA) and elastic recoil detection (ERD), etc.

Programming and Software Skills:

• Proficient in programming languages such as Python, Visual C, Fortran and LabVIEW, with experience in software development.

Research Leadership:

• Experience in managing research teams composed of scientists, technologists, postdoctoral scholars, and/or graduate students.

About Our Team:

The Radiation-Solid Interactions Department is a dynamic team comprised of students, post-doctoral appointees, permanent technical staff, and technologists dedicated to operating and maintaining the Ion Beam Laboratory (IBL). Our vibrant team brings together a diverse range of backgrounds, skill sets, and work styles, fostering a collaborative environment.

The IBL is equipped with eight major accelerators, including a 6 MV Tandem, a 3 MV Single Ended Pelletron, a 1 MV tandem, a 400 kV implanter, two 30 kV Helium Ion Microscopes, and both 35 kV and 100 kV mass velocity filtered focused ion beam systems, achieving spot sizes of less than 10 nm on target. Additional experimental facilities include microbeam lines on all major accelerators and a Transmission Electron Microscope (TEM) equipped with gas, fluid, and nanomechanical stages, allowing for in-situ ion irradiation from both the Tandem and a Colutron source. While our major equipment is typically operated by individual technologists, the team collaborates to develop new capabilities, perform maintenance, and achieve significant scientific results.

The IBL focuses on three major research thrusts:

1. Understanding Material and Device Performance in Radiation Environments: These projects investigate the performance of microelectronics in space and other hostile environments, as well as cladding materials used in nuclear reactors and storage facilities.
2. Developing and Applying Novel Ion Beam Techniques for Material and Surface Characterization: We utilize advanced techniques to precisely measure material compositions, including mapping hydrogen isotopes in fusion wall materials and analyzing the composition of complex thin films such as transition metal oxides.
3. Exploring the Materials Science of Defects in Solids: This broad area encompasses single ion implants for quantum applications, anomalous grain growth in nanograined materials, hydride formation under irradiation, and the nanomechanical responses of materials.

Within each research thrust, individual staff members cultivate deep expertise in their respective fields, while our technologists acquire specialized knowledge in instrumentation and data acquisition. Teams are formed by leveraging these complementary skill sets to collaborate on research that directly impacts Sandia¿s mission areas.

Our leadership is committed to fostering a culture that embraces diversity and inclusivity, encourages open dialogue and the sharing of ideas, and strives for excellence in research.

Join us in pursuing your goals while making a meaningful difference!

Posting Duration:

This posting will be open for application submissions for a minimum of seven (7) calendar days, including the ‘posting date’. Sandia reserves the right to extend the posting date at any time.

Security Clearance:

Sandia is required by DOE to conduct a pre-employment drug test and background review that includes checks of personal references, credit, law enforcement records, and employment/education verifications. Applicants for employment need to be able to obtain and maintain a DOE Q-level security clearance, which requires U.S. citizenship. If you hold more than one citizenship (i.e., of the U.S. and another country), your ability to obtain a security clearance may be impacted.

Applicants offered employment with Sandia are subject to a federal background investigation to meet the requirements for access to classified information or matter if the duties of the position require a DOE security clearance. Substance abuse or illegal drug use, falsification of information, criminal activity, serious misconduct or other indicators of untrustworthiness can cause a clearance to be denied or terminated by DOE, resulting in the inability to perform the duties assigned and subsequent termination of employment.

EEO:

All qualified applicants will receive consideration for employment without regard to race, color, religion, sex, sexual orientation, gender identity, national origin, age, disability, or veteran status and any other protected class under state or federal law.

NNSA Requirements for MedPEDs:

If you have a Medical Portable Electronic Device (MedPED), such as a pacemaker, defibrillator, drug-releasing pump, hearing aids, or diagnostic equipment and other equipment for measuring, monitoring, and recording body functions such as heartbeat and brain waves, if employed by Sandia National Laboratories you may be required to comply with NNSA security requirements for MedPEDs.

If you have a MedPED and you are selected for an on-site interview at Sandia National Laboratories, there may be additional steps necessary to ensure compliance with NNSA security requirements prior to the interview date.

Job ID: 696390

Job Family: RD

Regular/Temporary Position: R

Full/Part-Time Status: F